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2N3108 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2N3108
NJSEMI
New Jersey Semiconductor NJSEMI
2N3108 Datasheet PDF : 3 Pages
1 2 3
NPN 2N3108-2N3110
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
Tamb=150°C
-
ICES
Collector Cutoff Current VCE = 60 V, VBE = 0
-
IEBO
VCBO
VCEO
VEBO
VcE(SAT)
VsE(SAT)
hFE
fr
CEBO
CCBO
Emitter Cutoff Current
VBE=5.0V, lc=0
-
Collector-Base
Breakdown Voltage
iIG —1iunun Ui iAA, IiE—un
2N3108
2N3110
100
80
Collector-emitter
Breakdown Voltage
iIG -—oQUH mr«AA , IiB—- nU
2N3108
2N3110
60
40
Emitter-Base Breakdown
Voltage
IE= 100 uA, l c = 0
7
Collector-Emitter
lc= 150mA, IB= 15mA
-
saturation Voltage
lc= 1 A, IB= 100mA
-
Base-Emitter saturation lc= 150mA, IB = 15mA
-
Voltage
l c = 1 A, IB = 100mA
-
lc= 150mA, VCE=1 V
40
DC Current Gain
lc=0.1 mA, VCE= 10 V
20
lc = 500 mA, VCE = 10V
25
lc= 150mA, VCE= 10V
15
Tamb=-55°C
Transition frequency
lc= 50mA, VCE = 10 V
f= 20MHz
60
Emitter-Base
Capacitance
IC=0,VEB=0.5V
f = 1MHz
-
Collector-Base
lE=i.=0, VCB = 10V 2N3108 -
Capacitance
f= 1MHz
2N3110 -
Typ Max Unit
- 10 uA
-
10 nA
-
10 nA
-
-
-
-
V
-
-
-
V
-
-
-
V
-
-
0.25
1
V
-
-
1.1 V
2
- 120
-
-
-
-
-
-
-
- MHz
-
80 PF
-
20
-
25 PF
SWITCHING TIMES
Symbol
ton
Turn-on time
toff
Turn-off time
Ratings
lc= 150 mA; IB1 = 7.5 mA,
Vcc = 20 V
lc = 1 50 mA
IBI = -Is2 ~ 7.5 mA
Vcc = 20 V
Value
200
600
Unit
ns

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