2N4906 Просмотр технического описания (PDF) - TT Electronics.

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производитель

2N4906

SILICON EPITAXIAL PNP TRANSISTOR

TT Electronics. 

SILICON EPITAXIAL

PNP TRANSISTOR

2N4906

• Low Collector Saturation Voltage.

• Hermetic TO3 Metal Package.

• Designed For General Purpose, Switching

and Power Amplifier Applications

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

-80V

VCEO

Collector – Emitter Voltage

-80V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-5A

IB

Base Current

-1.0A

PD

Total Power Dissipation at TC = 25°C

87.5W

Derate Above 25°C

0.5W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols Parameters

RθJC

Thermal Resistance, Junction To Case

Min. Typ. Max. Units

2

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8299

Website: http://www.semelab-tt.com

Issue 1

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