2N3053 Просмотр технического описания (PDF) - TT Electronics.
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2N3053 Datasheet PDF : 3 Pages
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MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO
V(BR)CER(1)
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
IC = 100µA
IC = 10mA
IC = 100µA
IE = 100µA
VCB = 30V
IB = 0
RBE = 10Ω
IE = 0
IC = 0
IE = 0
IEBO
hFE(1)
VCE(sat)(1)
VBE(sat)(1)
Emitter Cut-Off Current
Forward-current transfer
ratio
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
VEB = 4V
IC = 150mA
IC = 150mA
IC = 150mA
IC = 0
VCE = 10V
IB = 15mA
IB = 15mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50mA
f = 20MHz
VCB = 10V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
VCE = 10V
IE = 0
IC = 0
Min. Typ Max. Units
40
50
V
60
5
0.25
µA
0.25
50
250
1.4
V
1.7
100
MHz
15
pF
80
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3065
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3
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