TSFF5200 Просмотр технического описания (PDF) - Vishay Semiconductors
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TSFF5200 Datasheet PDF : 5 Pages
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www.vishay.com
TSFF5210
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120
RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 100 mA, tp = 20 ms
VF
IF = 1 A, tp = 100 μs
VF
Temperature coefficient of VF
IF = 1 mA
TKVF
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
Radiant power
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
Ie
120
Ie
e
Temperature coefficient of e
Angle of half intensity
IF = 100 mA
TKe
Peak wavelength
IF = 100 mA
p
Spectral bandwidth
Temperature coefficient of p
IF = 100 mA
IF = 100 mA
TKp
Rise time
IF = 100 mA
tr
Fall time
IF = 100 mA
tf
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
Virtual source diameter
d
TYP.
1.5
2.3
- 1.8
125
180
1800
50
- 0.35
± 10
870
40
0.25
15
15
24
3.7
MAX.
1.8
3.0
10
360
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.8, 24-Aug-11
2
Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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