TSUS4300 Просмотр технического описания (PDF) - Vishay Semiconductors
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TSUS4300 Datasheet PDF : 5 Pages
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www.vishay.com
TSUS4300
Vishay Semiconductors
180
160
140
120
100
80 RthJA = 300 K/W
60
40
20
0
0
21315
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 300 K/W
60
40
20
0
0
21316
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
VF
-
IF = 1.5 A, tp = 100 μs
VF
-
IF = 100 mA
TKVF
-
Reverse current
Breakdown voltage
Junction capacitance
VR = 5 V
IR
-
IR = 100 μA
V(BR)
5
VR = 0 V, f = 1 MHz, E = 0
Cj
-
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Ie
7
Ie
-
φe
-
TKφe
-
ϕ
-
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
λp
-
Δλ
-
TKλp
-
tr
-
tr
-
tf
-
tf
-
Virtual source diameter
d
-
TYP.
1.3
2.2
-1.3
-
40
30
18
160
20
-0.8
± 16
950
50
0.2
800
400
800
400
2.1
MAX.
1.7
-
-
100
-
-
35
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 1.9, 20-Oct-15
2
Document Number: 81053
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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