TS2012EIJT Просмотр технического описания (PDF) - STMicroelectronics

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TS2012EIJT

Filter-free Flip Chip stereo 2 x 2.5 W class D audio power amplifier

STMicroelectronics 

TS2012EI

Electrical characteristics

Table 8. VCC = +2.5 V, GND = 0 V, Vic = 1.25 V, Tamb = 25 °C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Unit

Supply current

ICC

No input signal, no load, both channels

ISTBY

Voo

Standby current

No input signal, VSTBY = GND

Output offset voltage

Floating inputs, G = 6 dB, RL = 8 

Output power

THD + N = 1% max, f = 1 kHz, RL = 4 

Po

THD + N = 1% max, f = 1 kHz, RL = 8 

THD + N = 10% max, f = 1 kHz, RL = 4 

THD + N = 10% max, f = 1 kHz, RL = 8 

THD + N

Efficiency

PSRR

Crosstalk

CMRR

Total harmonic distortion + noise

Po = 0.2 W, G = 6 dB, f = 1 kHz, RL = 8 

Efficiency per channel

Po = 0.45 W, RL = 4  + 15 µH

Po = 0.3 W, RL = 8  + 15 µH

Power supply rejection ratio with inputs grounded

Cin = 1 µF (1),f = 217 Hz, RL = 8 Gain = 6 dB

Vripple = 200 mVpp

Channel separation

G = 6 dB, f = 1 kHz, RL = 8 

Common mode rejection ratio

Cin = 1 µF, f = 217 Hz, RL = 8 Gain = 6 dB

VICM = 200 mVpp

Gain

Gain value with no load

G1 = G0 = VIL

G1 = VIL and G0 = VIH

G1 = VIH and G0 = VIL

G1 = G0 = VIH

2.8

4

mA

0.45

2

µA

25

mV

0.45

0.3

W

0.6

0.38

0.2

%

78

%

87

65

dB

90

62

dB

5.5

6

6.5

11.5

12

12.5

dB

17.5

18

18.5

23.5

24

24.5

Zin

FPWM

SNR

tWU

Single-ended input impedance

Referred to ground

Gain = 6 dB

Gain = 12 dB

Gain = 18 dB

Gain = 24 dB

Pulse width modulator base frequency

Signal-to-noise ratio (A-weighting)

Po = 0.28 W, G = 6 dB, RL = 8 

Total wake-up time(2)

24

30

36

k

24

30

36

12

15

18

6

7.5

9

190 280 370

kHz

93

dB

3

7.8

12

ms

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