SGW23N60UFD Просмотр технического описания (PDF) - Fairchild Semiconductor
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SGW23N60UFD Datasheet PDF : 7 Pages
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1000
Eoff
100
Eon
Eon
Eoff
10
4
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
23Ω
T = 25℃
C
T = 125℃
C
8
12
16
20
24
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 25 Ω
12 TC = 25℃
9
300 V
6
200 V
VCC = 100 V
3
0
0
10
20
30
40
50
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
300
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
200
100
10
1
0.1
1
Safe Operating Area
V = 20V, T = 100℃
GE
C
10
100
Collector-Emitter Voltage, V [V]
CE
1000
Fig 16. Turn-Off SOA Characteristics
5
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.005
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW23N60UF Rev. A1
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