SSF2816EB Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF2816EB Datasheet PDF : 5 Pages
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Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
VDS=20V,VGS=0V
VGS=±4.5V,VDS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=4V, ID=6A
VGS=3.1V, ID=5.5A
VGS=2.5V, ID=5.5A
VDS=10V,ID=6.5A
VDS=8V,VGS=0V,
F=1.0MHz
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
VDS=10V,ID=7A,
VGS=4.5V
VGS=0V,IS=1.5A
SSF2816EB
1
μA
±200
nA
±10
uA
0.6 0.75 1.2
V
16.5
22
mΩ
17
23
mΩ
19
26
mΩ
22
30
mΩ
6.6
S
600
PF
330
PF
140
PF
10
20
nS
11
25
nS
35
70
nS
30
60
nS
10
15
nC
2.3
nC
3
nC
0.84 1.2
V
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