SSF1016 Просмотр технического описания (PDF) - GOOD-ARK
Номер в каталоге
Компоненты Описание
производитель
SSF1016 Datasheet PDF : 6 Pages
| |||
SSF1016
100V N-Channel MOSFET
FEATURES
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =75A
BV=100V
RDS (ON) =16mΩ (Max.)
DESCRIPTION
The SSF1016 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1016 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF1016 Top View (T0-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM
Pulsed drain current ①
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS
Gate-to-Source voltage
EAS
Single pulse avalanche energy ②
EAR
Repetitive avalanche energy
dv/dt Peak diode recovery voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
75
65
300
273
1.5
±20
380
TBD
31
–55 to +175
Units
A
W
W/ْ C
V
mJ
mJ
v/ns
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
Typ.
Max.
—
0.55
—
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 100 —
—V
RDS(on) Static Drain-to-Source on-resistance — 11
16 mΩ
VGS(th) Gate threshold voltage
2.0 — 4.0 V
——
2
IDSS Drain-to-Source leakage current
——
μA
10
IGSS Gate-to-Source forward leakage
— — 100 nA
www.goodark.com
Page 1 of 6
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=100V,VGS=0V
VDS=100V,
VGS=0V,TJ=150ْC
VGS=20V
Rev.2.2
Share Link: 