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SCH1331

P-Channel Power MOSFET –12V, –3A, 84mΩ, Single SCH6

ON Semiconductor 

Ordering number : ENA1530A

SCH1331

P-Channel Power MOSFET

–12V, –3A, 84mΩ, Single SCH6

http://onsemi.com

Features

• Low ON-resistance

• Ultrahigh-speed switching

• 1.8V drive

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

VDSS

VGSS

ID

IDP

PD

Tch

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm)

Storage Temperature

Tstg

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Ratings

Unit

--12

V

±10

V

--3

A

--12

A

1

W

150

°C

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7028-002

1.6

0.2

654

SCH1331-TL-H

0.2

Product & Package Information

• Package

: SCH6

• JEITA, JEDEC

: SOT-563

• Minimum Packing Quantity : 5,000 pcs./reel

Packing Type : TL

Marking

YG

1 23

0.5

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

TL

Electrical Connection

1, 2, 5, 6

SCH6

3

4

Semiconductor Components Industries, LLC, 2013

July, 2013

62712 TKIM/81909PE TKIM TC-00002017 No. A1530-1/7

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