EMIF09-02726S3 Просмотр технического описания (PDF) - STMicroelectronics

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EMIF09-02726S3

EMI FILTER INCLUDING ESD PROTECTION

STMicroelectronics 

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

VPP

PPP

Tstg

Tj

TOP

Parameter

Maximum electrostatic discharge in following

measurement conditions:

MIL STD 883C - METHOD 3015-6

IEC1000-4-2 - air discharge

IEC1000-4-2 - contact discharge

Peak pulse power (8/20µs)

Storage temperature range

Junction temperature

Operating temperature range

EMIF09-02726Sx

Value

Unit

25

kV

16

9

200

W

- 55 to + 150

°C

150

°C

- 40 to + 85

°C

Symbol

VRM

VBR

VCL

VF

CIN

Rd

IRM

IPP

Parameter

Stand-off voltage

Breakdown voltage

Clamping voltage

Forward voltage drop

Input capacitance per line

Dynamic impedance

Leakage current

Peak pulse current

I

IF

VBR

VCL

VRM

VF

V

IRM

Slope = 1 / Rd

IPP

Symbol

Test conditions

IRM

VRM = 5.25 V, between any I/O pin and GND

VBR IR = 1 mA, between any I/O pin and GND

VF

IF = 200 mA, between any I/O pin and GND

Rd

IPP = 15 A, tp = 2.5µs (note 2)

C

0V bias VRMS = 30mV F = 1MHz (note 3)

Note 1: VCL corresponds to the voltage level seen at the output pin

Note 2: Rd is given per diode

Note 3: C is given per diode

Min. Typ. Max. Unit

20

µA

6.1

7.2

V

1.25

V

0.3

Ω

130

pF

2/12

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