CGY59W Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

CGY59W

GaAs MMIC

Infineon Technologies 

GaAs Components

CGY 59W

Thermal Resistance

Parameter

Symbol

Channel-soldering point (GND)

RthChS

Junction-ambient1)

RthJA

1) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Value

≤ t.b.d.

< t.b.d.

Unit

K/W

K/W

Electrical Characteristics of CGY 59W in 1850 MHz Application Circuit

TA = 25 °C, f = 1850 MHz, RS = RL = 50 Ω, unless otherwise specified

Characteristics

Symbol

Limit Values

min. typ. max.

Drain current

Power Gain

VD = 3 V

VD = 5 V

Noise figure

VD = 3 V

VD = 5 V

Input return loss

VD = 3 V

VD = 5 V

Output return loss

VD = 3 V

VD = 5 V

Third order input intercept point

two-tone intermodulation test

f1 = 1850 MHz, f2 = 1851 MHz

PIN = – 20 dBm (both carriers)

VD = 3 V

VD = 5 V

Input power at 1 dB gain compression

VD = 3 V

VD = 5 V

ID

–

G

–

–

F

–

–

RLIN

–

–

RLOUT

–

–

IP3

–

–

P– 1 dB

–

–

6

–

12 –

13 –

1.70 –

1.65 –

12 –

12 –

13 –

13 –

1

–

2

–

–8 –

–6 –

Unit

mA

dB

dB

dB

dB

dBm

dBm

Data Sheet

2

2001-01-01

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