DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CGY59 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
CGY59
Infineon
Infineon Technologies Infineon
CGY59 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
GaAs MMIC
CGY 59
________________________________________________________________________________________________________
Electrical characteristics of CGY59 in GSM application circuit (see page 4)
TA = 25°C
f=950MHz
unless otherwise specified
RS = RL = 50
Characteristics
Drain current
Power Gain
Ud = 3V
Ud = 5V
Noise figure
Ud = 3V
Ud = 5V
Input return loss
Ud = 3V
Ud = 5V
Output return loss
Ud = 3V
Ud = 5V
Third order input intercept point
two-tone intermodulation test
f1 = 950MHz, f2 = 951MHz
Pin = -20dBm (both carriers)
Ud = 3V
Ud = 5V
Input power at
1dB gain compression
Ud = 3V
Ud = 5V
Symbol min
typ
max Unit
ID
-
6
-
mA
G
-
16.5
-
dB
-
18
-
F
-
1.3
-
dB
-
1.3
-
RLin
-
10
-
dB
-
11
-
RLout
-
11
-
dB
-
9
-
IP3
dBm
-
-4
-
-
-2
-
P-1dB
-
-13
-
dBm
-
-11.5
-
Siemens Aktiengesellschaft
pg. 2/8
12.01.96
HL EH PD 21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]