BAW56S Просмотр технического описания (PDF) - TY Semiconductor

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производитель

BAW56S

High-Speed Double Diode Array

TY Semiconductor 

Product specification

BAW56S

Features

Small plastic SMD package

High switching speed: max. 4 ns

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 85 V

Repetitive peak forward current:max. 450 mA.

SOT-363

1.3+0.1

-0.1

0.65

Unit: mm

0.3+0.1

-0.1

2.1+0.1

-0.1

0.1+0.05

-0.02

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Conditions

Min

Per diode

repetitive peak forward current

VRRM

continuous reverse voltage

VR

continuous forward current

single diode loaded;

IF

all diodes loaded;

repetitive peak forward current

IFRM

square wave; Tj = 25 prior to surge;

non-repetitive peak forward current

IFSM

t=1 s

t = 1 ms

t=1s

total power dissipation

Ptot

Ts = 60 ; note 1

storage temperature

Tstg

-65

junction temperature

Tj

-65

thermal resistance from junction to ambient

Rth j-a

Note

1. One or more diodes loaded.

Max

Unit

85

V

75

V

250

mA

100

mA

450

mA

4

A

1

0.5

350

mW

+150

+150

255

K/W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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