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Schottky Barrier Diodes

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

3

CATHODE

1

ANODE

Order this document

by BAS40LT1/D

BAS40LT1

Motorola Preferred Device

40 VOLTS

SCHOTTKY BARRIER DIODES

MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

VR

40

Volts

PF

225

mW

1.8

mW/°C

Operating Junction and Storage Temperature Range TJ, Tstg – 55 to +150 °C

DEVICE MARKING

BAS40LT1 = B1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Reverse Breakdown Voltage

(IR = 10 µA)

V(BR)R

Total Capacitance

CT

(VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage

IR

(VR = 25 V)

Forward Voltage

VF

(IF = 0.1 mAdc)

Forward Voltage

VF

(IF = 30 mAdc)

Forward Voltage

VF

(IF = 100 mAdc)

3

1

2

CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)

Min

Max

Unit

40

—

Volts

—

5.0

pF

—

1.0

µAdc

—

380

mVdc

—

500

mVdc

—

1.0

Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Bergquist Company.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1997

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