AO3420 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

AO3420

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

AO3420

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Drain-Source Voltage

Drain Current – Continuous

Drain Current- Continuous

Pulsed Drain Current

Gate-Source Voltage

Total Power Dissipation

Total Power Dissipation

Operating and Storage Junction Temperature

Range

符号

Symbol

VDS

ID

ID(Ta=70℃)

IDM

VGS

PD

PD(Ta=70℃)

TJ, TSTG

数值

Rating

20

6

5

25

±12

1.4

0.9

-55 to 150

单位

Unit

V

A

A

A

V

W

W

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Drain–Source Breakdown Voltage

符号

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Gate–Body Leakage.

On–State Drain Current

Gate Threshold Voltage

Static Drain–Source

On–Resistance

Forward Transconductance

Drain–Source Diode Forward

Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

IGSS

ID(on)

VGS(th)

RDS(on)1

RDS(on)2

RDS(on)3

gFS

VSD

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

测试条件

Test Conditions

VGS=0V

ID=250μA

VDS=16V

VDS=16V

TJ=55℃

VGS=±12V

VGS=0V

VGS=0V

VDS=0V

VGS=4.5V VDS=5V

VDS=VGS

ID=250μA

VGS=10V

VGS=10V

TJ=125℃

VGS=4.5V

ID=6A

ID=6A

ID=5A

VDS=5V

ID=3.8A

VGS=0V

IS=1A

VDS=10V

f=1MHz

VGS=0V

VGS=5V

VDS=10V

RL=1.7Ω

RGEN=6Ω

最小值 典型值 最大值 单位

Min Typ Max Unit

20

V

1.0 μA

5.0 μA

±0.1 μA

25

A

0.5 0.7 1

V

19 24

29 35 mΩ

22 27

24

S

0.75 1

V

630

164

pF

137

5.5

14

ns

29

10.2

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