SI2328DS(2001) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2328DS Datasheet PDF : 4 Pages
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Si2328DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.6
250
Capacitance
0.5
0.4
VGS = 10 V
0.3
0.2
0.1
0.0
0
3
6
9
12
ID – Drain Current (A)
Gate Charge
20
VDS = 10 V
ID = 1.5 A
16
200
Ciss
150
100
50
Coss
Crss
0
0
20
40
60
80
100
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 1.5 A
2.0
12
1.5
8
1.0
4
0.5
0
0
1
2
3
4
5
6
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
1
TJ = 150_C
0.1
TJ = 25_C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
0.0
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5 ID = 1.5 A
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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