UT62W256CLSL-35LE Просмотр технического описания (PDF) - Utron Technology Inc

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UT62W256CLSL-35LE

32K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62W256C

32K X 8 BIT LOW POWER CMOS SRAM

Notes :

1. WE , CE must be high during all address transitions.

2.A write occurs during the overlap of a low CE , low WE .

3. During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed

on the bus.

4.During this period, I/O pins are in the output state, and input signals must not be applied.

5. If the CE low transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state.

6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.

DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃ / -20℃ to 85℃(E))

PARAMETER

SYMBOL

Vcc for Data Retention VDR

Data Retention Current IDR

Chip Disable to Data

Retention Time

Recovery Time

tRC* = Read Cycle Time

tCDR

tR

TEST CONDITION

CE ≧VCC-0.2V

Vcc=1.5V

CE ≧VCC-0.2V

See Data Retention

Waveforms (below)

DATA RETENTION WAVEFORM

MIN.

1.5

-L

-

- LL -

0

tRC*

TYP.

-

1

0.5

-

MAX.

5.5

20

10

-

UNIT

V

µA

µA

ns

-

-

ns

Low Vcc Data Retention Waveform ( CE controlled)

VCC

CE

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

CE ≧ VCC-0.2V

Vcc(min.)

tR

VIH

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

7

P80069

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