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UT62W256CLSL-35LE Просмотр технического описания (PDF) - Utron Technology Inc

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производитель
UT62W256CLSL-35LE
Utron
Utron Technology Inc Utron
UT62W256CLSL-35LE Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Rev. 1.1
UTRON
UT62W256C
32K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to VSS
Operation Temperature
Commercial
Extended
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
VTERM
TA
TA
TSTG
PD
IOUT
Tsolder
RATING
-0.5 to 7.0
0 to 70
-20 to 85
-65 to 150
1
50
260
UNIT
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE
Standby
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L=VIL, X = Don't care.
OE
WE
I/O OPERATION
SUPPLY CURRENT
X
X
High - Z
ISB, ISB1
H
H
High - Z
ICC,ICC1,ICC2
L
H
DOUT
ICC,ICC1,ICC2
X
L
DIN
ICC,ICC1,ICC2
DC ELECTRICAL CHARACTERISTICS (TA = 0to 70/ -20to 85(E))
PARAMETER SYMBOL TEST CONDITION
MIN. TYP. MAX. MIN. TYP. MAX. UNIT
Power Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
VCC
VIH1
VIL2
ILI
VSS VIN VCC
VSS VI/O VCC,
2.7~3.6
4.5~5.5
V
2.0 - VCC+0.5 2.2
- VCC+0.5 V
- 0.5 -
0.6 - 0.5 -
0.8
V
-1 -
1
-1
-
1
µA
ILO
CE =VIH or OE = VIH - 1 -
1
-1
-
1
µA
or WE = VIL
VOH IOH= - 1mA
VOL IOL= 4mA
2.2 -
-
2.4
-
-
V
-
-
0.4
-
-
0.4
V
ICC
CE = VIL ,II/O =
0mA ,Cycle=Min.
- 35 -
- 70 -
-
-
40
20
-
40
50
mA
-
30
40
mA
Operation Power
Supply Current
Cycle=1µs CE =0.2V;
ICC1
II/O = 0mA other pins at
-
-
6
-
-
10
mA
0.2V or VCC-0.2V
Cycle=500ns CE =0.2V
ICC2
; II/O = 0mA other pins
-
-
12
-
-
20 mA
at 0.2V or VCC-0.2V
Standby Power Supply
ISB
CE =VIH
-
3
-
3
mA
Current
ISB1
CE VCC-0.2V
-L - 1
-LL - 0.5
40
20
-
-
2 100 µA
1
50
µA
Notes:
1. Overshoot : Vcc+2.0v for pulse width less than 10ns.
2. Undershoot : Vss-2.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
P80069

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