UMN1N Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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UMN1N Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Diodes
UMN1N SWITCHING DIODE
SOT-353
FEATURES
Multiple Diodes in One Small Surface Mount Package
Diode Characteristics are Matched in the Package
APPLICATIONS
High Speed Switching
MARKING: N1
+
+
+
+
N1
+-+
N1
+-+
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR
Continuous Reverse Voltage
IO
Continuous Forward Current
IFM
Peak Forward Current
IFSM
Non-repetitive Peak Forward Surge Current@t= 8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
TJ
Junction Temperature
Tstg
Storage Temperature
Value
80
25
80
0.25
150
833
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Test conditions
IR=100μA
Min Typ Max Unit
80
V
Reverse current
IR
VR=70V
0.1
μA
Forward voltage
Total capacitance
Reverse recovery time
VF
IF=5mA
Ctot
VR=6V,f=1MHz
trr
IF= IR=5mA, VR=6V, RL=50Ω
0.9
V
3.5
pF
4
ns
www.cj-elec.com
1
C,Mar,2016
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