VCR2N Просмотр технического описания (PDF) - Toshiba

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VCR2N

JFET Voltage-Controlled Resistors

Toshiba 

VCR2N/4N/7N

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics (VCR7N)

200

VGS(off) = −2.5 V

160

120

VGS = 0 V

−0.5 V

80

40

0

0

−1.0 V

−1.5 V

−2.0 V

0.2

0.4

0.6

0.8

1

VDS − Drain-Source Voltage (V)

APPLICATIONS

A simple application of a FET VCR is shown in Figure 1, the

circuit for a voltage divider attenuator.

R

VIN

−

VGS

+

VCR

VOUT

FIGURE 1. Simple Attenuator Circuit

The output voltage is:

VOUT =

VIN rDS

R + rDS

It is assumed that the output voltage is not so large as to push

the VCR out of the linear resistance region, and that the rDS is

not shunted by the load.

The lowest value which VOUT can assume is:

VOUT(min) =

VIN rDS(on)

R + rDS(on)

Since rDS can be extremely large, the highest value is:

VOUT(max) = VIN

Document Number: 70293

S-41225—Rev. F, 28-Jun-04

www.vishay.com

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