CEM9939 Просмотр технического описания (PDF) - Chino-Excel Technology

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производитель

CEM9939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Chino-Excel Technology 

CEM9939

N-Channel

1.2

1.1

VDS=VGS

ID=250 A

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation

with Temperature

1.15

5

1.10

ID=250 A

1.05

1.00

0.95

0.90

0.85

-25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C)

Figure 6. Breakdown Voltage

Variationwith Temperature

13.0

11.0

9.0

7.0

5.0

VDS=15V

2.5

0

0

2

4

6

8

10

IDS, Drain-Source Current (A)

Figure 7. Transconductance Variation

with Temperature

20.0

10.0

5.0

1.0

0 0.3 0.6 0.9 1.2 1.5

VDS, Body Diode Forward Voltage (V)

Figure 8. Body Diode Forward

VoltageVariation with

Source Current

5-171

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