TIPL760C Просмотр технического описания (PDF) - Inchange Semiconductor
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TIPL760C Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
TIPL760C
FEATURES
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1200
V
VCEO Collector-Emitter Voltage
550
V
VEBO Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
4
A
ICM
Peak collector current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
8
A
75
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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