SI3456DV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456DV Datasheet PDF : 5 Pages
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Si3456DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 10, 9, 8, 7, 6, 5 V
16
16
4V
12
12
Transfer Characteristics
8
4
0
0
0.10
3V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
0.06
0.04
VGS = 4.5 V
VGS = 10 V
0.02
0.00
0
4
8
12
16
20
ID - Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 5.1 A
8
6
4
2
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
8
4
0
0
1000
800
TC = 125_C
25_C
- 55_C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Capacitance
Ciss
600
400
Coss
200
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.45
1.30
VGS = 10 V
ID = 5.1 A
1.15
1.00
0.85
0.70
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
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