SI3456DV Просмотр технического описания (PDF) - Vishay Semiconductors

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SI3456DV

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

N-Channel 30-V (D-S) MOSFET

Si3456DV

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

0.045 @ VGS = 10 V

30

0.065 @ VGS = 4.5 V

ID (A)

5.1

4.3

FEATURES

D TrenchFETr Power MOSFET

D 100% Rg Tested

3 mm

TSOP-6

Top View

1

6

2

5

3

4

2.85 mm

Ordering Information: Si3456DV-T1

(1, 2, 5, 6) D

(3) G

(4) S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150_C)a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

VDS

VGS

ID

IDM

IS

PD

TJ, Tstg

30

"20

5.1

4.1

20

1.7

2

1.3

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Notes

a. Surface Mounted on FR4 Board, t v 5 sec.

Symbol

RthJA

Limit

62.5

Unit

V

A

W

_C

Unit

_C/W

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