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CGA-3318 Просмотр технического описания (PDF) - Stanford Microdevices

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производитель
CGA-3318 Datasheet PDF : 5 Pages
1 2 3 4 5
Preliminary
CGA-3318 Dual SiGe HBT Amplifier
Typical RF Performance @ VS=8V, ID=150mA, RBIAS=51 Ohms, TL=+25°C
50
45
40
35
30
25
20
0
100
90
80
70
60
50
40
30
20
0
6
5
4
3
2
1
0
0
IP3 vs. Temperature
-4 0 C
25C
85C
0.2
0.4
0.6
0.8
1
Frequency (MHz)
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
66MHz
100MHz
250MHz
500MHz
3
6
9
12
15
Pout (dBm)
Push-Pull CGA-3318 Noise Figure
50MHz-900MHz, Typical
200 400 600 800
Frequency (MHz)
1000
80
75
70
65
60
55
50
0
100
90
80
70
60
50
40
30
20
0
110
100
90
80
70
60
50
40
0
IP2 vs. Temperature
-4 0 C
25C
85C
0.2
0.4
0.6
0.8
1
Frequency (MHz)
Third Harmonic vs. Pout and Freq.
Data shown is typical at 25C
66MHz
100MHz
250MHz
500MHz
3
6
9
12
15
Pout (dBm)
Push-Pull CGA-3318 CTB/CSO/XMOD
34 dBmV/Ch., 79 Ch.,Flat
C TB
C S O+
CSO-
Xmod
100 200 300 400 500 600
Frequency (MHz)
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101993 Rev B

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