CGA-3318 Просмотр технического описания (PDF) - Stanford Microdevices

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CGA-3318

Dual CATV Broadband High Linearity SiGe HBT Amplifier

Stanford Microdevices 

Preliminary

CGA-3318 Dual SiGe HBT Amplifier

Typical S-Parameters @ VS=8V, ID=150mA, RBIAS=51 Ohms, TL=+25°C

Gain vs. Frequency

15

13

11

9

-40C

7

25C

85C

5

0

200

400

600

800

1000

Frequency (MHz)

-5

-8

-11

-14

-17

-20

0

Output Return Loss vs. Frequency

-40C

25C

85C

200

400

600

800

1000

Frequency (MHz)

-5

-10

-15

-20

-25

-30

0

Input Return Loss vs. Frequency

-40C

25C

85C

200

400

600

800

1000

Frequency (MHz)

Absolute Maximum Ratings

Parameter

Absolute Limit

Max. Device Current (ID)

Max. RF Input Power

225 mA

+18 dBm

Max. Junction Temp. (TJ)

Operating Temp. Range (TL)

Max. Storage Temp.

+150ºC

-40ºC to +85ºC

+150ºC

Operation of this device beyond any of these limits

may cause permanent damage.

Bias Conditions should also satisfy the following

expression: IDVD (max) < (TJ - TL)/Rth,j-l

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

2

http://www.stanfordmicro.com

EDS-101993 Rev B

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