SFT1446 Просмотр технического описания (PDF) - ON Semiconductor

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SFT1446

N-Channel Power MOSFET 60V, 20A, 51mΩ, Single TP/TP-FA

ON Semiconductor 

SFT1446

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=60V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=10A

ID=10A, VGS=10V

ID=5A, VGS=4.5V

ID=5A, VGS=4V

VDS=20V, f=1MHz

See specified Test Circuit.

VDS=30V, VGS=10V, ID=14A

IS=20A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=30V

ID=10A

RL=3Ω

D

VOUT

SFT1446

P.G

50Ω

S

Ratings

Unit

min

typ

max

60

V

1

μA

±10

μA

1.2

2.6

V

7.0

S

39

51 mΩ

54

76 mΩ

62

87 mΩ

750

pF

59

pF

47

pF

8.5

ns

31

ns

60

ns

48

ns

16

nC

3.3

nC

3.6

nC

1.01

1.2

V

Ordering Information

Device

SFT1446-H

SFT1446-TL-H

Package

TP

TP-FA

20

Tc=25°C

18 Single pulse

ID -- VDS

4.5V

16

4.0V

14

12

10

3.5V

8

6

4

3.0V

2

VGS=2.5V

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source Voltage, VDS -- V IT15539

Shipping

500pcs./bag

700pcs./reel

memo

Pb Free and Halogen Free

30

VDS=10V

Single pulse

25

ID -- VGS

20

15

10

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Gate-to-Source Voltage, VGS -- V IT15540

No. A1742-2/9

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