MOSPEC
SRF1030 thru SRF1060
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*150℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*ESD: 8KV(Min.) Human-Body Model
*In compliance with EU RoHs 2002/95/EC directives
Schottky Barrier
RECTIFIERS
10 AMPERES
30~60 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
30
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM 30
VR
RMS Reverse Voltage
VR(RMS) 21
Average Rectifier Forward Current ( per doode )
Total Device (Rated VR), TC=125℃
IF(AV)
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single IFSM
phase, 60Hz)
Operating and Storage Junction Temperature
Range
TJ , Tstg
SRF10
35 40 45 50
35 40 45 50
25 28 32 35
5.0
10
10
125
-65 to +150
Unit
60
60 V
42 V
A
A
A
℃
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 100℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
Symbol
30
VF
Rθ j-c
IR
SRF10
30 40 45
0.55
0.47
4.2
0.5
20
Unit
50 60
0.70
V
0.60
℃/w
mA
DIM MILLIMETERS
MIN MAX
A 14.80 16.1
B 12.65 13.8
C 9.9 10.36
D 4.6
6.8
E 2.5
3.5
F 1.00 1.45
G 1.00 1.45
H 0.3
0.9
I 2.3
2.7
J 2.34
3.3
K 0.55 1.30
L 0.36 0.80
M 4.2
4.9
N 1.1
1.8
O 2.9
3.5
P 2.5 3.15
Q 2.9
3.5
R 3.1
3.8