SRF1060 Просмотр технического описания (PDF) - Nanjing International Group Co
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SRF1060 Datasheet PDF : 2 Pages
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SRF1020 THRU SRF10200
10.0AMP SCHOTTKY BARRIER RECTIFIERS
SRF
VOLTAGE RANGE
20 to 200 Volts
CURRENT
10.0Ampere s
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency
• Low forward voltage, high current capability
• High surge capacity
• For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
ITO-220AC
MECHANICAL DATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-202,
Method 208
• Polarity: as marked
• Mounting Position: Any
• Weight: 0.08ounces, 2.24 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25℃ ambient temperature unless otherwise specified
• Single Phase, half wave, 60Hz, resistive or inductive load
• For capacitive load derate current by 20%
SYMBOLS
SRF
1020
SRF
1030
SRF
1035
SRF
1040
SRF
1045
SRF
1050
SRF
1060
SRF
1080
SRF
10100
SRF
10150
SRF
10200
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM 20 30 35 40 45 50 60 80 100 150 200 Volts
Maximum RMS Voltage
VRMS 14 21 25 28 32 35 42 56 70 105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 35 40 45 50 60 80 100 150 200 Volts
Maximum Average Forward Rectified Current
At Tc=100℃
I(AV)
10.0
Amps
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
IFSM
150
Amps
Maximum Forward Voltage at 10.0A per element
VF
0.65
0.75
0.85
Volts
Maximum DC Reverse Current at TC = 25℃
rated DC Blocking Voltage per
element
TC = 100℃
IR
0.5
mA
50
Typical Junction Capacitance(Note2)
CJ
500
pF
Typical Thermal Resistance (Note 1)
RθJC
4.0
℃/W
Operating Storage Temperature Range
TJ TSTG
(-55 to +150)
℃
Notes:
1. Thermal Resistance Junction to CASE
2. Measured at VR=4v and f=1MHz
E-mail: nanjing@dgnjdz.com
www.dgnjdz.com
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