SPF-2086TK Просмотр технического описания (PDF) - Sirenza Microdevices => RFMD
Номер в каталоге
Компоненты Описание
производитель
SPF-2086TK Datasheet PDF : 5 Pages
| |||
SPF-2086TK Low Noise FET
Absolute Maximum Ratings
Operation of this device beyond any one of these
parameters may cause permanent damage.
Parameter
Drain Current
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
Forward Gate Current
Reverse Gate Current
Drain-to-Source Voltage
Gate-to-Drain Voltage
PDC - POUT < (TJ - TL) / RTH
where:
PDC = IDS * VDS (W)
POUT = RF Output Power (W)
TJ = Junction Temperature (°C)
TL = Lead Temperature (pin 4) (°C)
RTH = Thermal Resistance (°C/W)
Gate-to-Source Voltage
RF Input Power
Operating Temperature
Storage Temperature Range
Power Dissipation
Channel Temperature
Symbol
IDS
IGSF
IGSR
VDS
VGD
VGS
PIN
TOP
Tstor
PDISS
TJ
Value
IDSS
0.3
0.3
+7
-8
<-5 or >0
100
-40 to +85
-40 to +150
600
+150
Unit
mA
mA
mA
V
V
V
mW
°C
°C
mW
°C
Noise parameters, at typical operating frequencies
Bias VDS=3.0V, IDS=20mA
FREQ GHZ
FMIN dB
|G OPT|
G OPT ANG rN W GA dB
1.0
0.28
0.74
17
0.22
23.1
2.0
0.44
0.69
31
0.18
17.8
4.0
0.54
0.54
84
0.09
13.9
6.0
0.70
0.28
179
0.05
12.2
FREQ GHZ
1.0
2.0
4.0
6.0
Bias VDS=5.0V, IDS=40mA
FMIN dB
|G OPT|
G OPT ANG
0.34
0.76
19
rN W
0.27
GA dB
23.9
0.55
0.67
36
0.23
19.1
0.75
0.47
93
0.11
15.0
1.04
0.31
-170
0.06
12.9
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101225 Rev. D
Share Link: 