1PS76SB17 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

1PS76SB17

Schottky barrier diode

TY Semiconductor 

Product specification

1PS76SB17

Features

Low forward volatge

Guard ring protected

ESD > 500 V; Human body model

Very small plastic SMD package.

SOD-323

1.7+0.1

-0.1

Unit: mm

0.85+0.05

-0.05

2.6+0.1

-0.1

0.475

0.375

1.0max

Absolute Maximum Ratings Ta = 25

PARAMATER

continuous reverse voltage

continuous forward current

storage temperature

junction temperature

SYMBOL MIN

VR

VF

Tstg

-65

Tj

MAX

4

30

+150

100

UNIT

V

mA

Electrical Characteristics Ta = 25

PARAMATER

SYMBOL

forward volatge

VF

reverse current

IR

diode capacitance

Cd

thermal resistance from junction to ambient Rth j-a

Note

1. Refer to SOD323 standard mounting conditions.

CONDITIONS

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

VR = 3 V;

f = 1 MHz; VR = 0 V;

f = 1 MHz; VR = 0.5 V;

note 1

TYP

MAX

UNIT

300

mV

360

450

mV

470

600

mV

0.15

0.25

A

0.8

1

pF

0.65

pF

450

K/W

Marking

Marking

S7

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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