IXFK100N10 Просмотр технического описания (PDF) - IXYS CORPORATION

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Компоненты Описание

производитель

IXFK100N10

HiPerFET Power MOSFETs

IXYS CORPORATION 

Fig.7 Gate Charge Characteristic Curve

12

VDS = 50V

10 ID = 75A

IG = 1mA

8

6

4

2

0

0 50 100 150 200 250 300 350 400

Gate Charge - nCoulombs

Fig.9 Source Current vs. Source

to Drain Voltage

150

125

100

75

TJ = 125°C

50

TJ = 25°C

25

0

0.00 0.25 0.50 0.75 1.00 1.25 1.50

VSD - Volt

Fig.10 Transient Thermal Impedance

0.5

0.1

IXFK 100N10

IXFN 150N10

Fig.8 Capacitance Curves

12000

10000

f = 1MHz

VDS = 25V

8000

Ciss

6000

4000

2000

0

0

Coss

Crss

5

10

15

20

25

VDS - Volts

0.01

0.001

0.01

0.1

1

Time - Seconds

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4-4

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