RFH45N06 Просмотр технического описания (PDF) - New Jersey Semiconductor
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RFH45N06 Datasheet PDF : 2 Pages
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RFH45N05, RFH45N06
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise speciried.
CHARACTERISTIC
TEST
SYMBOL CONDITIONS
LIMITS
RFH45NOS
RFH45N06
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source Leakage
Current
Drain-Source On Voltage
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Ofl Delay Time
Fall Time
Thermal Resistance
Junction-to-Case
BVoss
Vos(th)
loss
loss
VD8(on)«
ros(on)»
g>,"
C,»
COM
c™
td(on)
t,
Wolf)
t.
R«ic
ID = 1 mA
Vos = 0
Vas = VDS
ID s 1 mA
VDS * 40 V
Vos = 50 V
Tc"125*C
VM = 40 V
Vos = 50 V
Vos = ± 20 V
VM = 0
ID * 22.5 A
Vos = 10 V
ID = 45 A
Vos = 10 V
ID = 22.5 A
Vos = 10 V
Vos = 10V
ID =• 22.5 A
Vos = 25 V
Vos = 0 V
f=1MHz
Vos * 30 V
ID = 22.5 A
R(w"R<j«-50n
Vos = 10 V
RFH45N05,
RFH45N06
Series
Mln.
50
2
-
—
^~
—
—
10
-
—
—
40(typ)
310(typ)
220(typ)
240(typ)
-
•Pulsed: Pulse duration = 300 //s max.. duty cycle = 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Max.
4
1
50
100
0.9
3.6
.04
—
3000
1800
750
80
475
350
376
0.83
Mln.
60
2
-
~
10
-
—
—
40(typ)
310(typ)
220(typ)
240(typ)
-
Max.
—
4
1
50
100
0.9
3.6
.04
—
3000
1800
750
80
475
350
375
0.83
UNITS
V
V
M
nA
V
0
mho
PF
ns
"C/W
LIMITS
CHARACTERISTIC
TEST CONDITIONS
RFH4SN05
RFH4SN06 UNITS
Mln. Max. Mln. Max.
Diode Forward Voltage
Reverse Recovery Time .
V80 '
ISD = 22.5A
-
1.4
-
1.4
V
tr.
IF « 4A. a,r/a, = 100 MUS
150 (typ.)
150 (typ.)
ns
' Pulse Test: Width < 300 //a, Duty cycle < 2%.
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