14N06L(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
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14N06L Datasheet PDF : 8 Pages
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RFD14N06L, RFD14N06LSM, RFP14N06L
Data Sheet
July 1999 File Number 4088.3
Title
FD1
06L
D14
6LS
P14
6L)
b-
t
A,
V,
00
m,
gic
vel,
Cha
el
wer
OS-
Ts)
utho
14A, 60V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N06L
TO-251AA
14N06L
RFD14N06LSM
TO-252AA
14N06L
RFP14N06L
TO-220AB
FP14N06L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
Packaging
JEDEC TO-251AA
Features
• 14A, 60V
• rDS(ON) = 0.100Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
ey-
rds
ter-
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
rpo-
on,
gic
vel,
Cha
el
wer
OS-
Ts,
-
0AB
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2001 Fairchild Semiconductor Corporation
RFD14N06L, RFD14N06LSM, RFP14N06L Rev. A
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