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Номер в каталоге
Компоненты Описание
RD2.4EB1 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RD2.4EB1
500 mW PLANAR TYPE SILICON ZENER DIODES
New Jersey Semiconductor
RD2.4EB1 Datasheet PDF : 5 Pages
1
2
3
4
5
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Type
Number
Suffix
RD2.0E
B
B1
B2
RD2.2E
B
B1
B2
RD2.4E
B
B1
B2
RD2.7E
B
B1
B2
RD3.0E
B
B1
B2
RD3.3E
B
B1
B2
RD3.6E
B
B1
B2
RD3.9E
B
B1
B2
RD4.3E
B
B1
B2
B3
RD4.7E
B
B1
B2
B3
RD5.1E
B
B1
B2
B3
RD5.6E
B
B1
B2
B3
RD6.2E
B
B1
B2
B3
Zener Voltage
Vz(V)
N01
"
MIN.
1.88
1.88
2.02
2.12
2.12
2.22
2.33
2.33
2.43
2.54
2.54
2.69
2.85
2.85
3.01
3.16
3.16
3.32
3.47
3.47
3.62
3.77
3.77
3.92
4.05
4.05
4.20
4.34
4.47
4.47
4.59
4.71
4.85
4.85
4.97
5.12
5.29
5.29
5.46
5.64
5.81
5.81
5.99
6.16
MAX.
2.20
2.10
2.20
2.41
2.30
2.41
2.63
2.52
2.63
2.91
2.75
2.91
3.22
3.07
3.22
3.53
3.38
3.53
3.83
3.68
3.83
4.14
3.98
4.14
4.53
4.26
4.40
4.53
4.91
4.65
4.77
4.91
5.35
5.03
5.18
5.35
5.88
5.52
5.70
5.88
6.40
6.06
6.24
6.40
Iz (mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
Dynamic
Impedance
Zz(n)"°"
MAX. Iz (mA)
140
20
120
20
100
20
100
20
80
20
70
20
60
20
50
20
40
20
25
20
20
20
13
20
10
20
Knee Dynamic
Impedance
ZzK(ti)
NO
"
!
Reverse Current
IR(JIA)
MAX.
Iz (mA) MAX. Iz (mA)
2000
1
120
0.5
2000
1
120
0.7
2000
1
120
1.0
1000
1
100
1.0
1000
1
50
1.0
1000
1
20
1.0
1000
1
10
1.0
1000
1
5
1.0
1000
1
5
1.0
900
1
5
1.0
800
1
5
1.5
500
1
5
2.5
300
1
5
3.0
Zener Voltage
Temperature
Coefficient
•yz (mV/°C)
MAX. Iz (mA)
-1.0
20
-1.5
20
-1.5
20
-1.5
20
-2.0
20
-2.0
20
-2.0
20
-2.0
20
-1.5
20
-1.0
20
0.5
20
1.5
20
2.0
20
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