RFD3055 Просмотр технического описания (PDF) - Harris Semiconductor

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производитель

RFD3055

12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

Harris Semiconductor 

RFD3055, RFD3055SM, RFP3055

Typical Performance Curves (Continued)

50

10

STARTING TJ = +150oC

STARTING TJ = +25oC

If R = 0

tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)

IF R ≠ 0

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

1

0.001

0.01

0.1

1

tAV, TIME IN AVALANCHE (msec)

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits

tp

IAS

BVDSS

VDS

VDD

tAV

FIGURE 14. UNCLAMPED ENERGY WAVEFORMS

VARY tP TO OBTAIN

RG

REQUIRED PEAK IAS

VGS

tP

0V

VDS

L

DUT

+

VDD

-

IL

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

VDS

tON

tD(ON)

tR

90%

tOFF

tD(OFF)

tF

90%

10%

10%

VGS

10%

50%

PULSE WIDTH

90%

50%

FIGURE 16. RESISTIVE SWITCHING WAVEFORMS

VGS

0V

RGS

VDD

RL

VDS

DUT

FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT

5

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