RFL1N10 Просмотр технического описания (PDF) - New Jersey Semiconductor
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RFL1N10 Datasheet PDF : 2 Pages
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Absolute Maximum Ratings Tc - 25°C, Unless otherwise Specified
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20kH) (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 3
Gate to Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
VQS
VDGR
ID
IDM
VGS
PD
Tj, TSTG
TL
RFL1N08
80
80
1
5
±20
8.33
0.0667
-55 to 150
260
RFL1N10
100
100
1
5
±20
8.33
0.0667
-55 to 1 50
260
UNITS
V
V
A
A
V
W
W/°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL1N08
BVDSS ID = 250nA, VGS =ov
80
.
_
V
RFL1N10
100 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH) VDS = VGS. !D = 250nA, (Figure 8)
2
toss VGS =Rated BVDSS, VGS = ov
-
VDS = 0.8 x Rated BVDSS, VGS = OV, Tj = 125°C -
-
4
V
-
1
HA
-
25 ^A
On-State Drain Current (Note 2)
'DION) VDS > ID(ON) x rDS(ON)MAX. VGS = 10V
1
-
-
A
Gate to Source Leakage Current
IGSS VGS = ±20V
-
- ±100 nA
Drain to Source On Resistance
rDS(ON) ID = 5.6A, VGS = 10V. (Figures 6, 7)
1.200 Q
Turn-On Delay Time
ld(ON) VDD = sov, VGS = 10V. ID= 1A, RG = son,
-
17 25
ns
Rise Time
Turn-Off Delay Time
V
MOSFET Switching Times are Essentially Inde-
-
30 45
ns
pendent of Operating Temperature
td(OFF)
-
30 45
ns
Fall Time
tf
-
30 50
ns
Input Capacitance
CISS VDS = 25V, VGS= ov, f = 1 MHZ
-
- 200 PF
Output Capacitance
coss
-
-
80
PF
Reverse Transfer Capacitance
CRSS
-
-
25
PF
Thermal Resistance Junction to Case
RBJC
-
-
°C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
Tj = 25°C, ISD=1A,VGS = OV
Reverse Recovery Time
trr
Tj = 25°C, ISD = 1A, dlSD/dt = 100A/HS
NOTES:
2. Pulse test: pulse width < 300|is, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
-
- 1.4
V
- 100 -
ns
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