RFL1N10 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге

Компоненты Описание

производитель

RFL1N10

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

New Jersey Semiconductor 

J

CX

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Lf nc.

RFL1N08,

RFL1N10

1A, 80V and 100V, 1.200 Ohm,

N-Channel, Power MOSFETs

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Features

• 1 A, 80V and 100V

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N08

TO-205AF

RFL1N08

RFL1N10

TO-205AF

RFL1N10

NOTE: When ordering, use the entire part number.

Description

These are N-channel enhancement mode silicon-gate power

field-effect transistors designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate-drive power.

These types can be operated directly from integrated cir-

cuits.

Symbol

Packaging

JEDEC TO-204AA

GO

S6

DRAIN

(CASE)

GATE

SOURCE

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, N.I Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.

NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

Share Link: