RB495D(2011) Просмотр технического описания (PDF) - ROHM Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RB495D Datasheet PDF : 4 Pages
| |||
Data Sheet
Schottky Barrier Diode
RB495D
Applications
General rectification.
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar
2.9±0.2
0.4 ＋－00..105 E各aリc同hー寸leド法 aとd も has same dimension
(3)
＋0.1
0 .15 －0.06
0.95
(2)
(1)
0.95
0.95
1.9±0.2
0～ 0.1
0 .8±0 .1
1. 1±0. 2
0. 01
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
0.8MIN.
SMD3
Structure
Taping specifications (Unit : mm)
4 .0± 0.1
2 .0±0 .05
φ1.5 ±0.1
0
0.3±0.1
3.2±0.1
4 .0±0 .1
φ 1.0 5MI N
1.35±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
25
V
Average rectified forward current (*1)
Io
0.4
mA
Forward current surge peak (60Hz・1cyc) (*1)
IFSM
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1) Rating of per diode : lo/2
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1
-
- 0.30
VF2
-
- 0.50
IR1
-
-
70
Unit
Conditions
V
IF=10mA
V
IF=200mA
μA
VR=25V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B
Share Link: 