RB751V-40 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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RB751V-40 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB751V -40 Schottky Barrier Diode
FEATURES
z Low current rectifier schottky diode
z Low voltage, low inductance
z For power supply
MAKING: 5
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
Non-repetitive Peak Forward
Surge Current@t=8.3ms
Power dissipation
Thermal Resistance Junction to Ambient
IO
IFSM
PD
RθJA
Junction temperature
Tj
Storage temperature
Tstg
Limit
40
30
0.03
0.2
200
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min Typ
VF
IR
CT
2
Max Unit
0.37 V
0.5 μA
pF
Unit
V
V
A
A
mW
℃/W
℃
℃
Conditions
IF=1mA
VR=30V
VR=1V, f=1MHZ
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1
E,Mar,2015
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