RB715F(2013) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

RB715F
(Rev.:2013)

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB715F

Datasheet

lApplication

Low current rectification

lFeatures

1) Small mold type. (UMD3)

2) Low VF

3) High reliability.

lConstruction

Silicon epitaxial planar

lDimensions (Unit : mm)

2.0±0.2

0.3±0.1

各Eaリchーleドadとhaもs same dimension

同寸法

(3)

0.15±0.05

lLand size figure (Unit : mm)

1.3

0.65

(2)

(1)

（0.65） （0.65）

1.3±0.1

ROHM : UMD3

JEDEC :SOT-323

JEITA : SC-70

dot (year week factory)

0～0.1

0.7±0.1

0.9±0.1

lTaping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φ 1.55±0.05

f1.550.05

UMD3 0.8MIN.

lStructure

cathode

anode anode

0.3±0.1

2.25±0.1

　　　　 0

4.0±0.1

fφ00.5.5±0.00.055

1.25±0.1

lAbsolute maximum ratings (Ta= 25°C)

Parameter

Symbol

Limits

Reverse voltage (repetitive peak)

VRM

40

Reverse voltage (DC)

VR

40

Average rectified forward current

Io

30

Forward current surge peak (60Hz・1cyc) (*1) IFSM

200

Junction temperature

Tj

125

Storage temperature

(*1) Rating of per diode

Tstg

-40 to +125

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF

-

- 0.37

Reverse current

IR

-

-

1

Capacitance between terminals

Ct

- 2.0 -

Unit

V

V

mA

mA

°C

°C

Unit

Conditions

V IF=1mA

mA VR=10V

pF VR=1V f=1MHz

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© 2013 ROHM Co., Ltd. All rights reserved.

1/5

2013.04 - Rev.C

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