MC33794 Просмотр технического описания (PDF) - Freescale Semiconductor

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MC33794

Electric Field Imaging Device

Freescale Semiconductor 

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 9.0 V ≤ VPWR ≤ 18 V, -40°C ≤ TA ≤ 85°C unless otherwise noted. Typical values noted

reflect the approximate parameter means at TA = 25°C under normal conditions unless otherwise noted. Voltages are relative

to GND unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

Electrode Signals

Total Variance Between Electrode Measurements (7)

All CLOAD = 15 pF

ELVVAR

–

Electrode Maximum Harmonic Level Below Fundamental (8)

ELHARM

5.0 pF ≤ CLOAD ≤ 100 pF

–

Electrode Transmit Output Range

5.0 pF ≤ CLOAD ≤ 100 pF

ELTXV

1.0

Receive Input Voltage Range

Grounding Switch on Voltage

ISW = 1.0 mA

RXV

0

SWVON

–

%

–

3.0

dB

-20

–

V

–

8.0

–

9.0

V

V

–

5.0

Shield Driver

Shield Driver Output Level

0 pF ≤ CLOAD ≤ 500 pF

Shield Driver Input Range

Grounding Switch on Voltage (9)

Logic I/O

SDTXV

1.0

SDIN

0

SWVON

–

V

–

8.0

–

9.0

V

–

1.5

V

CMOS Logic Input Low Threshold

Logic Input High Threshold

Voltage Hysteresis

Input Current

VIN = VCC

VIN = 0 V

VTHL

0.3

–

–

VCC

VTHH

–

–

0.7

VCC

VHYS

–

0.06

–

VCC

IIN

µA

10

–

50

-5.0

–

5.0

Signal Detector

Detector Output Resistance

DETRO

–

LP_CAP to LEVEL Gain

AREC

3.6

LP_CAP to LEVEL Offset

VRECOFF

-3.3

Notes

7. Verified by design. Not tested in production.

8. Verified by design and characterization. Not tested in production.

9. Current into grounded terminal under test = 1.0 mA.

50

–

kΩ

4.0

4.4

AV

-3.0

-2.7

V

MC33794

8

Sensors

Freescale Semiconductor

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