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MBRF1645HE3_B/P Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание
производитель
MBRF1645HE3_B/P
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
MBRF1645HE3_B/P Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
MBRF16xx, MBRB16xx
Vishay General Semiconductor
Schottky Barrier Rectifier
ITO-220AC
2
1
MBRF16xx
PIN 1
PIN 2
D2PAK (TO-263AB)
K
2
1
MBRB16xx
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
16 A
35 V to 60 V
150 A
0.57 V, 0.65 V
150 °C
ITO-220AC, D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: ITO-220AC, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBRB1635
MBRB1645
Maximum repetitive peak reverse voltage
VRRM
35
45
Working peak reverse voltage
VRWM
35
45
Maximum DC blocking voltage
VDC
35
45
Maximum average forward rectified current at TC = 125 °C
IF(AV)
16
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
IRRM
dV/dt
TJ
TSTG
VAC
1.0
10 000
-65 to +150
-65 to +175
1500
MBRB1660
60
60
60
UNIT
V
A
0.5
V/μs
°C
V
Revision: 26-Sep-2018
1
Document Number: 88671
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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