2SJ511 Просмотр технического описания (PDF) - Toshiba

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2SJ511

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)

Toshiba 

Marking

ZF

Lot No.

2SJ511

Note 5: A line to the right of a Lot No. identifies the indication of

Part No.

(or abbreviation code)

product Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Note 5

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±16 V, VDS = 0 V

VDS = −30 V, VGS = 0 V

V (BR) DSS ID = −10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −1 A

VGS = −10 V, ID = −1 A

VDS = −10 V, ID = −1 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

toff

Total gate charge (Gate−source

plus gate−drain)

Qg

Gate−source charge

Qgs

VDD ≈ −24 V, VGS = −10 V, ID = −2 A

Gate−drain (“miller”) charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Continuous drain reverse current

(Note 1)

IDR (Note 1)

—

Pulse drain reverse current

(Note 1)

IDRP (Note 1)

—

Forward voltage (diode)

VDSF

IDR = −2 A, VGS = 0 V

Reverse recovery time

Reverse recovery charge

trr

IDR = −2 A, VGS = 0 V

Qrr

dIDR / dt = 50 A / μs

2

Min Typ. Max Unit

—

—

±10

μA

—

— −100 μA

−30 —

—

V

−0.8 —

−2.0

V

— 0.55 0.76

Ω

— 0.32 0.45

0.7 1.4

—

S

— 160 —

—

30

—

pF

—

85

—

—

30

—

—

45

—

ns

—

30

—

— 120 —

—

5.5

—

—

4.3

—

nC

—

1.2

—

Min Typ. Max Unit

—

—

−2

A

—

—

−6

A

—

—

1.5

V

—

40

—

ns

—

18

—

nC

2009-09-29

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