2SD1651 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SD1651

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat Base-emitter saturation voltage

IC=4A ;IB=0.8A

ICBO

Collector cut-off current

ICES

Collector cut-off current

VCB=800V; IE=0

VCES=1500V; RBE=∞

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

IF=5A

Product Specification

2SD1651

MIN TYP. MAX UNIT

800

V

3.0

5.0

V

1.5

V

10

μA

1.0

mA

40

130

mA

8

3

MHz

2.0

V

2

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