2SD2453 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD2453 Datasheet PDF : 3 Pages
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Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
80
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
2
A
Peak collector current *
ICP
4
A
Base current
IB
1
A
Collector power
TC = 25°C PC
10
W
dissipation
1
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
Note) Non-repetitive peak collector current
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Emiter-base cutoff current (Collector open) IEBO
Forward current transfer ratio *
hFE
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
IC = 25 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
60
V
100 µA
100 µA
100 µA
500
2 500
1
V
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE
500 to 1 000 800 to 1 500 1 200 to 2 500
Publication date: September 2003
SJD00268AED
1
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