2SD2457G Просмотр технического описания (PDF) - Panasonic Corporation
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2SD2457G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2457G
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
/ • Low collector power dissipation PC
• Mini Power type package, allowing downsizing of the equipment
e and automatic insertion through the tape packing and the maga-
. zine packing.
nc d stage ■ Absolute Maximum Ratings Ta = 25°C
cle Parameter
Symbol Rating
Unit
a e lifecy Collector-base voltage (Emitter open) VCBO
50
V
t Collector-emitter voltage (Base open) VCEO
40
V
n u duc Emitter-base voltage (Collector open) VEBO
5
V
ro Collector current
IC
1.5
A
te tin ur P Peak collector current
ICP
3
A
g fo e . Collector power dissipation *
PC
1
W
win typ tion Junction temperature
Tj
150
°C
in n follo nce e d a Storage temperature
Tstg −55 to +150 °C
es tena typ type form / Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
a o lud in ce d t in /en board thickness of 1.7 mm for the collector portion
■ Package
• Code
MiniP3-F2
• Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Y
c ued incned maintenanontinued type t lates .co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tin pla ma disc tinue bou onic Parameter
Symbol
Conditions
Min Typ Max Unit
on d n a as Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0
50
V
isc lane isco URL .pan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
40
V
e/D p d ing on Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
1
µA
Danc llow mic Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
ten fo .se Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IE = 0
10
µA
in isit ww Forward current transfer ratio *1, 2
hFE VCE = 5 V, IC = 1 A
80
220
Ma e v ://w Collector-emitter saturation voltage *1 VCE(sat) IC = 1.5 A, IB = 0.15 A
1.0
V
as ttp Base-emitter saturation voltage *1
VBE(sat) IC = 2 A, IB = 0.2 A
1.5
V
Ple h Transition frequency *1
fT
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob VCB = 20 V, IE = 0, f = 1 MHz
45
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160 120 to 220
Publication date: October 2007
SJD00345AED
1
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