2SD874A-Q Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

2SD874A-Q

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD874A

Transistors

■ Features

● Large collector power dissipation PC

● Low collector-emitter saturation voltage VCE(sat)

● Complimentary to 2SB766A

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

60

VCEO

50

V

VEBO

5

IC

1

A

PC

500

mW

TJ

150

℃

Tstg

-55 to 150

1.Base

2.Collector

3.Emitter

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= 100 μA， IE= 0

VCEO Ic= 2 mA， IB= 0

VEBO IE= 100μA， IC= 0

ICBO VCB= 50 V , IE= 0

IEBO VEB= 4V , IC=0

VCE(sat) IC=500 mA, IB=50mA

VBE(sat) IC=500 mA, IB=50mA

hFE(1) VCE= 10V, IC= 500mA

hFE(2) VCE= 5V, IC= 1A

Cob VCB= 10V, IE= 0,f=1MHz

fT

VCE= 10V, IC= 50mA,f=200MHz

■ Classification of hfe(1)

Type

2SD874A-Q

Range

85-170

Marking

YQ

2SD874A-R

120-240

YR

2SD874A-S

170-340

YS

Min Typ Max Unit

60

50

V

5

100

nA

100

0.4

V

1.2

85

340

50

20

pF

200

MHz

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