2SD2015 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD2015 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2015
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=2A ;IB=2mA
VCB=150V; IE=0
VEB=6V; IC=0
IC=2A ; VCE=2V
fT
Transition frequency
IC=0.1A ; VCE=12V
COB
Collector output capacitance
Switching times
f=1MHz;VCB=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A IB1=-IB2=10mA
VCC=40V ,RL=20A
MIN TYP. MAX UNIT
120
V
1.5
V
2.0
V
10
µA
10
mA
2000
40
MHz
40
pF
0.6
µs
5.0
µs
2.0
µs
2
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